Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from perturbations, and fast spin dynamics. Introducing some these intriguing features an into a low dimensional semiconductor core–shell nanowire exciting pathway its usage in antiferromagnetic spintronics. Here, using quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell behaves semiconductor. The origin alignments between Cr is attributed to superexchange interaction mediated by pz orbitals Ge atoms are bonded Cr. A weak spin–orbit was found this material, suggesting longer coherence length. spin-dependent transport calculations junction reveals switching feature with high ON/OFF current ratio (∼41 times higher ON state at relatively small bias 0.83 V).